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IF4520

Document Number: IF35096.R00

InterFET Corporation

June, 2019

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IF4520

Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IF4520

Unit

Min

Typ

Max

V(BR)GSS

Gate to Source

Breakdown Voltage

VDS = 0V, IG = -1μA

-40

-45

V

IGSS

Gate to Source

Reverse Current

VGS = -10V, VDS = 0V

-50

-1000

pA

VGS(OFF)

Gate to Source

Cutoff Voltage

VDS = 10V, ID = 1nA

-0.3

V

IDSS

Drain to Source

Saturation Current

VGS = 0V, VDS = 15V

(Pulsed)

8

20

mA

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

Value

Unit

VRGS Reverse Gate Source and Gate Drain Voltage

-40

V

IFG

Continuous Forward Gate Current

10

mA

PD

Continuous Device Power Dissipation

300

mW

P

Power Derating

2.8

mW/°C

TJ

Operating Junction Temperature

-55 to 150

°C

TSTG Storage Temperature

-65 to 175

°C

Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IF4520

Unit

Min

Typ

Max

GFS

Forward

Transconductance

VDS = 15V, VGS = 0V, f = 1kHz

20

30

mS

Ciss

Input Capacitance

VDS = 0V, VGS = -10V, f = 1MHz

75

pF

Crss

Reverse Transfer

Capacitance

VDS = 0V, VGS = -10V, f = 1MHz

15

pF