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extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and

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IF35112.R00

IFBF510-1

InterFET

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IFBF510, IFBF511 N-Channel JFET

Features

• InterFET N0026 Geometry

• Low Noise: 3 nV/√Hz Typical

• Low Ciss: 5.0pF Maximum

• Low Leakage: 10pA Typical

• RoHS Compliant

• SMT, TH, and Bare Die Package options.

Applications

• Low Noise High Gain

• Replacement for BF510 and BF511

• Mixers

• Oscillators

• VHF Amplifiers

Description

The -20V InterFET IFBF510 and IFBF511 are

targeted for low noise amplifier stages as well as

mixer and oscillator designs. Gate leakages are

typically less than 10pA at room temperatures.

The TO-72 package is hermetically sealed and

suitable for military applications.

Ordering Information Custom Part and Binning Options Available

Part Number

Description

Case

Packaging

IFBF510; IFBF511

Through-Hole

TO-72

Bulk

PNBF510; PNBF511

Through-Hole

TO-92

Bulk

SMPBF510; SMPBF511

Surface Mount

SOT23

Bulk

SMPBF510TR; SMPBF511TR

7“ Tape and Reel: Max 3,000 Pieces

13” Tape and Reel: Max 9,000 Pieces

SOT23

Minimum 1,000 Pieces

Tape and Reel

IFBF510COT; IFBF511COT

Chip Orientated Tray (COT Waffle Pack)

COT

400/Waffle Pack

IFBF510CFT; IFBF511CFT

Chip Face-up Tray (CFT Waffle Pack)

CFT

400/Waffle Pack

1

2

3

Source

Drain

Gate

SOT23 Top View

Product Summary

Parameters

IFBF510 Min

IFBF511 Min

Unit

BVGSS

Gate to Source Breakdown Voltage

-20

-20

V

IDSS

Drain to Source Saturation Current

0.7

2.5

mA

VGS(off)

Gate to Source Cutoff Voltage

-0.8 (typ)

-1.5 (typ)

V

GFS

Forward Transconductance

2.5

4

mS

TO-72 Bottom View

3

2

1

Gate

Source

Drain

4

Case

Source

Gate

Drain

TO-92 Bottom View

1

2

3

Note: The SOT23 package is pinned out differently than the BF51x

part to optimize thermal performance. Package and pinout

variations are available through InterFET custom ordering.