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IFN17

Document Number: IF35014.R00

InterFET Corporation

June, 2019

IFN17

InterFET

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Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFN17

Unit

Min

Max

V(BR)GSS

Gate to Source

Breakdown Voltage

VDS = 0V, IG = -1μA

-20

V

IGSS

Gate to Source

Reverse Current

VGS = -10V, VDS = 0V

-0.1

nA

VGS(OFF)

Gate to Source

Cutoff Voltage

VDS = 10V, ID = 1nA

-0.5

-6.0

V

IDSS

Drain to Source

Saturation Current

VGS = 0V, VDS = 10V

(Pulsed)

0.3

6.5

mA

IDF

Forward

Diode Voltage

VDS = 0V, IGS = 10μA

0.4

0.8

V

Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFN17

Unit

Typical

GFS

Forward Transconductance

VDS = 10V, VGS = 0V, f = 1kHz

2.0

mS

Ciss

Input Capacitance

VDS = 10V, VGS = 0V, f = 1MHz

4

pF

Crss

Reverse Transfer Capacitance

VDS = 10V, VGS = 0V, f = 1MHz

1.2

pF

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

Value

Unit

VRGS Reverse Gate Source and Gate Drain Voltage

-20

V

IFG

Continuous Forward Gate Current

50

mA

PD

Continuous Device Power Dissipation

300

mW

P

Power Derating

2

mW/°C

TJ

Operating Junction Temperature

-55 to 125

°C

TSTG Storage Temperature

-65 to 175

°C