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IFN40

Document Number: IF35015.R00

InterFET Corporation

June, 2019

IFN40

InterFET

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Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFN40

Unit

Min

Max

V(BR)GSS

Gate to Source

Breakdown Voltage

VDS = 0V, IG = -1μA

-50

V

IGSS

Gate to Source

Reverse Current

VGS = -30V, VDS = 0V

1.0

nA

VGS(OFF)

Gate to Source

Cutoff Voltage

VDS = 15V, ID = 1nA

-0.4

-5.0

V

IDSS

Drain to Source

Saturation Current

VGS = 0V, VDS = 15V

(Pulsed)

0.6

6.5

mA

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

Value

Unit

VRGS Reverse Gate Source and Gate Drain Voltage

-50

V

IFG

Continuous Forward Gate Current

50

mA

PD

Continuous Device Power Dissipation

300

mW

P

Power Derating

2

mW/°C

TJ

Operating Junction Temperature

-55 to 125

°C

TSTG Storage Temperature

-65 to 175

°C

Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFN40

Unit

Typ

GFS

Forward

Transconductance

VDS = 15V, VGS = 0V

2.0

mS

Ciss

Input Capacitance

VGS = 0V, VDS = 15V

4.0

pF

Crss

Reverse Transfer

Capacitance

VGS = 0V, VDS = 15V

1.2

pF