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IFP44

Document Number: IF35087.R00

InterFET Corporation

June, 2019

IFP44

InterFET

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Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFP44

Unit

Min

Max

V(BR)GSS

Gate to Source

Breakdown Voltage

VDS = 0V, IG = -1μA

25

V

IGSS

Gate to Source

Reverse Current

VGS = 10V, VDS = 0V

1

nA

VGS(OFF)

Gate to Source

Cutoff Voltage

VDS = 10V, ID = 100nA

0.2

1.5

V

IDSS

Drain to Source

Saturation Current

VGS = 0V, VDS = 10V

(Pulsed)

1

18

mA

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

Value

Unit

VRGS Reverse Gate Source and Gate Drain Voltage

25

V

IFG

Continuous Forward Gate Current

10

mA

PD

Continuous Device Power Dissipation

300

mW

P

Power Derating

2.8

mW/°C

TJ

Operating Junction Temperature

-55 to 125

°C

TSTG Storage Temperature

-65 to 150

°C

Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFP44

Unit

Typical

GFS

Forward

Transconductance

VDS = 10V, VGS = 0V, f = 1kHz

9

mS

Ciss

Input Capacitance

VDS = 10V, VGS = 0V, f = 1MHz

15

pF

Crss

Reverse Transfer

Capacitance

VDS = -10V, VGS = 0V, f = 1MHz

3

pF