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IFP5020A-B

Document Number: IF35083.R00

InterFET Corporation

June, 2019

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IFP5020A-B

Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFP5020A

IFP5020B

Unit

Min

Max

Min

Max

V(BR)GSS

Gate to Source

Breakdown Voltage

VDS = 0V, IG = -1μA

25

25

V

IGSS

Gate to Source

Reverse Current

VGS = 15V, VDS = 0V

1

1

nA

VGS(OFF)

Gate to Source

Cutoff Voltage

VDS = -15V, ID = 1nA

0.3

1.5

0.3

1.8

V

IDSS

Drain to Source

Saturation Current

VGS = 0V, VDS = -15V

(Pulsed)

-0.15

-1.2

-0.3

-1.2

mA

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

Value

Unit

VRGS Reverse Gate Source and Gate Drain Voltage

25

V

IFG

Continuous Forward Gate Current

50

mA

PD

Continuous Device Power Dissipation

500

mW

P

Power Derating

4

mW/°C

TJ

Operating Junction Temperature

-55 to 125

°C

TSTG Storage Temperature

-65 to 200

°C

Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFP5020A

IFP5020B

Unit

Min

Max

Min

Max

GFS

Forward

Transconductance

VDS = -15V, VGS = 0V

0.5

3.5

1.0

3.5

mS

GOS

Output Conductance

VDS = -15V, VGS = 0V

20

20

μS

Ciss

Input Capacitance

VDS = -15V, VGS = 0V, f = 1MHz

25

25

pF

Crss

Reverse Transfer

Capacitance

VDS = -15V, VGS = 0V, f = 1MHz

7

7

pF