LX5561

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 2

Copyright

© 2006

Rev. 1.0, 2006-12-20

InGaAs – E-Mode pHEMT Low Noise Amplifier

TM

®

ABSOLUTE MAXIMUM RATINGS

DC Supply Voltage, RF Off........................................................................................... 4 V

Drain Current ............................................................................................................ 40 mA

Total Power Dissipation ............................................................................................0.15 W

RF Input Power ..................................................................................................... +10 dBm

Operation Ambient Temperature................................................................. -40°C to +85°C

Storage Temperature Range ........................................................................ -65

°C to 150°C

Package Peak Temp. for Solder Reflow (40 seconds maximum exposure).... 260°C (+0 -5)

Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to

Ground. Currents are positive into, negative out of specified terminal

.

PACKAGE PIN OUT

N/C

RF IN

N/C

N/C

RF OUT

N/C

2

1

3

4

5

6

7

8

9

10

11

12

(Bottom View)

RoHS / Pb-free NiPdAu Finish

FUNCTIONAL PIN DESCRIPTION

Name

Pin #

Description

RF IN

2

RF input for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking

capacitor.

RF OUT

8

RF output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking

capacitor.

VDD

12

Supply voltage.

GND

5

Ground.

N/C

1,3,4,6,7,9,

10,11,

Center

Metal

Not Connected. They can be treated either as open pins or connected to ground.