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ESDL2031 Datasheet(PDF) 2 Page - ON Semiconductor |
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ESDL2031 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 8 page ![]() ESDL2031 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter VRWM Working Peak Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current VHOLD Holding Reverse Voltage IHOLD Holding Reverse Current RDYN Dynamic Resistance IPP Maximum Peak Pulse Current VC Clamping Voltage @ IPP VC = VHOLD + (IPP * RDYN) I V VCVRWMVHOLD VBR RDYN VC IR IT IHOLD −IPP RDYN IPP VC = VHOLD + (IPP * RDYN) VRWM VHOLD IR IT IHOLD VBR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM I/O Pin to GND 4.0 V Breakdown Voltage VBR IT = 1 mA, I/O Pin to GND 5.1 8.5 V Reverse Leakage Current IR VRWM = 4.0 V, I/O Pin to GND 0.05 mA Reverse Holding Voltage VHOLD I/O Pin to GND 2.5 V Holding Reverse Current IHOLD I/O Pin to GND 55 mA Clamping Voltage TLP (Note 2) VC IPP = 8 A IEC61000−4−2 Level 2 Equivalent (±4 kV Contact, ±8 kV Air) 5.25 V IPP = 16 A IEC61000−4−4 Level 2 Equivalent (±8 kV Contact, ±16 kV Air) 7.1 Reverse Peak Pulse Current IPP per IEC61000−4−5 (8x20 ms) Figure 11 9.75 A Clamping Voltage 8/20 ms Waveform per Figure 11 VC IPP = 9.75 A 8.0 V Dynamic Resistance RDYN Pin1 to Pin2 Pin2 to Pin1 0.22 0.22 W Junction Capacitance CJ VR = 0 V, f = 1 MHz 0.40 0.55 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see Figure 12 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window: t1 = 70 ns to t2 = 90 ns. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 TIME (ns) TIME (ns) 140 100 80 60 40 20 0 −20 −10 0 10 20 40 50 70 100 80 60 140 40 20 0 −20 30 60 −70 −50 −40 −30 −10 0 −20 10 120 −60 120 80 100 90 −100 −80 −90 |
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