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ESDL2031 Datasheet(PDF) 2 Page - ON Semiconductor

Part # ESDL2031
Description  ESD Protection Diodes
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESDL2031 Datasheet(HTML) 2 Page - ON Semiconductor

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ESDL2031
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
VRWM
Working Peak Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
VHOLD
Holding Reverse Voltage
IHOLD
Holding Reverse Current
RDYN
Dynamic Resistance
IPP
Maximum Peak Pulse Current
VC
Clamping Voltage @ IPP
VC = VHOLD + (IPP * RDYN)
I
V
VCVRWMVHOLD
VBR
RDYN
VC
IR
IT
IHOLD
−IPP
RDYN
IPP
VC = VHOLD + (IPP * RDYN)
VRWM
VHOLD
IR
IT
IHOLD
VBR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
I/O Pin to GND
4.0
V
Breakdown Voltage
VBR
IT = 1 mA, I/O Pin to GND
5.1
8.5
V
Reverse Leakage Current
IR
VRWM = 4.0 V, I/O Pin to GND
0.05
mA
Reverse Holding Voltage
VHOLD
I/O Pin to GND
2.5
V
Holding Reverse Current
IHOLD
I/O Pin to GND
55
mA
Clamping Voltage
TLP (Note 2)
VC
IPP = 8 A
IEC61000−4−2 Level 2 Equivalent
(±4 kV Contact, ±8 kV Air)
5.25
V
IPP = 16 A
IEC61000−4−4 Level 2 Equivalent
(±8 kV Contact, ±16 kV Air)
7.1
Reverse Peak Pulse Current
IPP
per IEC61000−4−5 (8x20 ms) Figure 11
9.75
A
Clamping Voltage 8/20 ms
Waveform per Figure 11
VC
IPP = 9.75 A
8.0
V
Dynamic Resistance
RDYN
Pin1 to Pin2
Pin2 to Pin1
0.22
0.22
W
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
0.40
0.55
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. For test procedure see Figure 12 and application note AND8307/D.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window: t1 = 70 ns to t2 = 90 ns.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
TIME (ns)
TIME (ns)
140
100
80
60
40
20
0
−20
−10
0
10
20
40
50
70
100
80
60
140
40
20
0
−20
30
60
−70
−50
−40
−30
−10
0
−20
10
120
−60
120
80
100
90
−100
−80
−90



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