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MMF60R360RZTH Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MMF60R360RZTH Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 10 page  MMF60R360RZ Datasheet Apr. 2022 Revision 1.1 Magnachip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain - Source voltage VDSS 600 V Gate - Source voltage VGSS ± 25 V Continuous drain current (1) ID 11 A TC=25 oC 7 A TC=100 oC Pulsed drain current (2) IDM 33 A Power dissipation PD 30.5 W Single - pulse avalanche energy (3) EAS 210 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness (4) dv/dt 15 V/ns Storage temperature Tstg - 55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) Id limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) IAS : 1.5A 4) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 4.10 oC/W Thermal resistance, junction-ambient max Rthja 63.6 oC/W Thermal Characteristics Absolute Maximum Rating (Tc=25oC unless otherwise specified) |
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