MS1006

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DESCRIPTION:

The MS1006 is a 50 V Class AB epitaxial silicon NPN planar

transistor designed primarily for SSB and VHF communications.

This device utilizes emitter ballasting for improved ruggedness and

reliability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

110

V

Collector-Emitter Voltage

55

V

Emitter-Base Voltage

4.0

V

Device Current

3.25

A

Power Dissipation

127

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Junction-Case Thermal Resistance

2.0

°°C/W

Features

Features

• Optimized for SSB

• 30 MHz

• 50 Volts

• Common Emitter

• Gold Metallization

• P

• G

RF AND MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855