140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS1008

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

DESCRIPTION:

The MS1008 is a 50V epitaxial silicon NPN planar transistor

designed primarily for SSB communications. This device

utilizes emitter ballasting to achieve extreme ruggedness

under severe operating conditions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

110

V

Collector-Emitter Voltage

55

V

Emitter-Base Voltage

4.0

V

Device Current

10

A

Power Dissipation

233

W

Junction Temperature

+200

°C

Storage Temperature

-65 to +150

°C

Thermal Data

Junction-Case Thermal Resistance

0.75

°C/W

Features

• 30 MHz

• 50 VOLTS

• IMD = –30 dB

• P

• G

• COMMON EMITTER CONFIGURATION

Rev A 11/2005