MS1226 datasheet(1/3 Pages) ADPOW

Part #	MS1226

Description	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

PDF	3 Pages

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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053-7055 Rev - 10-2002

MS1226

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

DESCRIPTION:

The MS1226 is a 28V epitaxial silicon NPN planar transistor

designed primarily for SSB communications. This device

utilizes emitter ballasting for improved ruggedness and

reliability.

ABSOLUTE MAXIMUM RATINGS

Symbol

Paramete

r

Value

U

nit

VCBO

Co llector-base Voltage

65

V

VCEO

Co llector-emitter Voltage

36

V

VEBO

Emit ter-Base Voltage

4.0

V

IC

Dev ice Current

4.5

A

PDISS

Po wer Dissipation

80

W

TJ

Ju nction Temperature

+200

C

TSTG

Storage Temperature

-65 to +150

C

Therma

Thermal Data

l Data

RTH(J-C)

Junction-case Thermal Resistance

2.2

C/W

Features

30 MHz

28 VOLTS

IMD = -28 dB

POUT = 30 WATTS

GP = 18 dB MINIMUM

COMMON EMITTER CONFIGURATION

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