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MS1403 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1403 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() MS1403 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCER Collector-Emitter Voltage 16 V VCES Collector-Emitter Voltage 36 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 0.75 A PDISS Power Dissipation 5.0 W TJ Junction Temperature +200 °°C TSTG Storage Temperature -65 to +150 °°C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 35 °°C/W Features Features • 175 MHz • 7.5 Volts • Common Emitter • POUT = 1.4 W Min. • G P = 7.0 dB Gain RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
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