MS2176

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DESCRIPTION:

The MS2176 is a gold metallized silicon NPN pulse power transistor

designed for applications requiring high peak power and low duty

cycles within the frequency range of 400 – 500 MHz.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

21.6

A

Power Dissipation

875

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Junction-Case Thermal Resistance

0.2

°°C/W

Features

Features

• 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY

CYCLE

• 300 WATTS @ 250µSEC PULSE WIDTH 10% DUTY

CYCLE

• 9.5 DB MIN. GAIN

• REFRACTORY GOLD METALLIZATION

• EMITTER BALLASTING AND LOW THERMAL

RESISTANCE FOR RELIABILITY AND RUGGEDNESS

• INFINITE VSWR CAPABILITY AT SPECIFIED

OPERATING CONDITIONS

RF AND MICROWAVE TRANSISTORS

UHF PULSED APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855