4

CoolGaNTM

Transistor 100 V G3

IGC033S101

Rev.

0.9,2024-05-20

Preliminary Data Sheet

3Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate threshold voltage

1)

VGS(th)

1.2

2.0

2.9

V

VDS=VGS,ID=

8 mA,measuredwithin

10msafterapre-biasatVGS=5V,

VDS=0Vforatleast5ms

Drain-source leakage current

IDSS

-

-

0.2

20

20

250

µA

VDS=100V,VGS=0V,Tj=25°C

VDS=100V,VGS=0V,Tj=125°C

Gate-source leakage current

IGSS

-

-

-

-

23

0.01

130

15

550

1.1

2200

100

µA

VGS=5V,Tj=25°C

VGS=-4V,Tj=25°C

VGS=5V,Tj=125°C

VGS=-4V,Tj=125°C

Drain-source on-state resistance

2)

RDS(on)

-

2.4

3.3

m

Ω

VGS=5V,ID=20A

Gate resistance

3)

RG

-

0.5

-

Ω

-

Table5Dynamiccharacteristics3)

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

Ciss

-

1100

-

pF

VGS=0V,VDS=50V,f=1MHz

Output capacitance

Coss

-

630

-

pF

VGS=0V,VDS=50V,f=1MHz

Reverse transfer capacitance

Crss

-

8.6

-

pF

VGS=0V,VDS=50V,f=1MHz

Table6Gatechargecharacteristics4)

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

3.0

-

nC

VDD=50V,ID=20A,VGS=0to5V

Gate charge at threshold

Qg(th)

-

2.3

-

nC

VDD=50V,ID=20A,VGS=0to5V

Gate to drain charge

3)

Qgd

-

3.4

-

nC

VDD=50V,ID=20A,VGS=0to5V

Switching charge

Qsw

-

4.0

-

nC

VDD=50V,ID=20A,VGS=0to5V

Gate charge total

3)

Qg

-

11.0

-

nC

VDD=50V,ID=20A,VGS=0to5V

Gate plateau voltage

Vplateau

-

2.6

-

V

VDD=50V,ID=20A,VGS=0to5V

Output charge

3)

Qoss

-

49

-

nC

VDD=50V,VGS=0V

1) When tested without the specified VGS pre-bias, VGS(th) will typically be 0.7 V lower than the threshold voltage

measured under the specified conditions.

2) RDS(ON) is measured without prior drain bias or switching stress. An upcoming application note will provide detailed information

aboutdynamicRDS(ON)andrecommendationsforinsitumeasurementintargetapplicationconditions.

3) Defined by design. Not subject to production test.

4) See

″Gate charge waveforms″ for parameter definition