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TCS800

800 Watts, 50 Volts, Pulsed

Avionics 1030 MHz

GENERAL DESCRIPTION

The TCS800 is a high power COMMON BASE bipolar transistor.

It is

designed for pulsed systems in the frequency band 1030 MHz, with the pulse

width and duty required for TCAS applications. The device has gold thin-film

metallization and diffused ballasting for proven highest MTTF. The transistor

includes input and output prematch for broadband capability.

Low thermal

resistance package reduces junction temperature, extends life.

CASE OUTLINE

55SM Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25

1944 W

Maximum Voltage and Current

65 V

3.5 V

50 A

Maximum Temperatures

Storage Temperature

-65 to +200

°C

Operating Junction Temperature

+230

°C

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

F = 1030 MHz

800

W

Power Input

126

W

Power Gain

8.0

9.0

dB

η

c

Collector Efficiency

45

%

Input Return Loss

PW = 32

µsec

DF = 1%

-12

dB

Pd

Pulse Droop

0.5

dB

VSWR

Load Mismatch Tolerance

F = 1030 MHz

4:1

FUNCTIONAL CHARACTERISTICS @ 25

°C

Emitter to Base Breakdown

Ie = 70 mA

3.5

V

Collector to Emitter Breakdown

Ic = 100 mA

65

V

DC – Current Gain

Vce = 5V, Ic = 5A

20

Thermal Resistance

0.09

°C/W

NOTE 1: At rated output power and pulse conditions.

*: Not measurable due to internal EB returns

Rev B – Sept. 2005