Microsemi

Page 2

Copyright

 2004

Rev. 0, 2004-10-15

UM9995

ULTRA LOW MAGNETIC MRI SWITCHING

DIODES

Note: 1 Short duration test pulse used to minimize self – heating effect.

Ρo

θt

Flange at 25ºC

7.5 W

20ºC/W

Free Air

1.5 W

-

Peak Power (1 µs @ 25ºC)

10 kW

Storage Temperature

Operating Temperature

-65 to +150ºC

-65 to +150ºC

ELECTRICAL PARAMETERS @ 25

°C (unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ.

Max

Units

Series Resistance

Rs

I = 100 mA

F = 100 MHz

-

0.4

0.6

Ω

Total Capacitance

Ct

V = 100V

F = 1MHz

-

-

1.2

pF

Parallel Resistance

Rp

V = 100 V

F = 100 MHz

100

-

-

kΩ

-

0.85

-

V

Carrier Lifetime

τ

If = 10 mA

2.0

µs

I-Region Width

W

80

µm