Parameter

Symbol

Condition

Min

Typ

Max

Unit

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250 A

1.2

1.6

2.4

V

VGS=10V, ID=5A

-

25.5

31

m

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=4A

-

34

43

m

Forward Transconductance

gFS

VDS=5V,ID=5A

-

15

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

-

255

-

PF

Output Capacitance

Coss

-

45

-

PF

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V,

F=1.0MHz

-

35

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

-

4.5

-

nS

Turn-on Rise Time

tr

-

2.5

-

nS

Turn-Off Delay Time

td(off)

-

14.5

-

nS

Turn-Off Fall Time

tf

VDD=15V, RL=3

VGS=10V,RGEN=3

-

3.5

-

nS

Total Gate Charge

Qg

-

5.2

-

nC

Gate-Source Charge

Qgs

-

0.85

-

nC

Gate-Drain Charge

Qgd

VDS=15V,ID=5A,

VGS=10V

-

1.3

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=5A

-

-

1.2

V

Diode Forward Current (Note 2)

IS

-

-

5

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

10 sec.

3. Pulse Test: Pulse Width

300 s, Duty Cycle

2%.

4. Guaranteed by design, not subject to production

FNK3404

FNK-Semiconductor

2/7

Feb.2017.Rev.1.0