G1135P

High Precision CC/CV Primary-Side PWM Power Switch

Rev. 1.0

4 of 10

4. Electrical Characteristics

(TA = 25℃, VDD=16V, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Supply Voltage

IVDD_ST

Standby current

VDD=13V

--

3.5

20.0

μA

IVDD_OP

Operation Current

INV=2V,CS=0V,

VDD =20V

--

0.9

1.5

mA

UVLO_ON

VDD Under Voltage

Lockout Enter

VDD falling

8.0

9.0

10.0

V

UVLO_OFF

VDD Under Voltage

Lockout Exit

VDD rising

13.5

14.5

16.0

V

OVP

Over voltage protection

voltage

Ramp up VDD until

gate clock is off

27.0

28.0

29.0

V

VDD_Clamp

Maximum VDD

operation voltage

IDD=10mA

32.0

33.5

35.0

V

Current Sense

TLEB

LEB time

--

--

500

--

ns

VTH_OC

Over current threshold

--

980

1000

1020

mV

ZSENSE_IN

Input Impedance

--

100

--

--

KΩ

T_SS

Soft start time

--

--

10

--

mS

Frequency Section

Freq_Max1

System Nominal switch

frequency

--

55

60

65

KHz

Freq_startup

--

INV=0V,Comp=5V

--

22

--

KHz

f/Freq

Frequency jitter range

--

--

+/-5

--

%

Error Amplifier Section

Vref_EA

Reference voltage for

EA

--

1.98

2.00

2.02

V

Gain

DC gain of the EA

--

--

60

--

dB

ICOMP_Max

Max. Cable

compensation current

INV=2V,COMP=0V

--

42

--

μA

Power MOS Section

BVdss

MOSFET Drain-Source

Breakdown Voltage

--

650

--

--

V

Rdson

On Resistance

--

--

4.4

--

Ω

Notes:

1.

Freq_Max indicates IC internal maximum clock frequency. In system application, the maximum operation

frequency of 60KHz nominal occurs at maximum output power or the transition point from CV to CC.