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RMP12N65IP Datasheet(PDF) 2 Page - Rectron Semiconductor

Part # RMP12N65IP
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

RMP12N65IP Datasheet(HTML) 2 Page - Rectron Semiconductor

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ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
12
A
Continuous
ID
12
A
Drain Current
Pulsed (Note 2)
IDM
48
A
Single Pulsed (Note 3)
EAS
790
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-251
TO-262
225
W
TO-220F
51
W
Power Dissipation
PD
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
TO-220/TO-220F
TO-251/TO-252
62.5
°C/W
Junction to Ambient
θJA
TO-220/TO-251
TO-252
0.56
°C/W
TO-220F
2.43
°C/W
Junction to Case
θJC
?? ?? ?? ?? ?? ?? ??



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