1/6

L6316

September 2004

This is preliminary information on a new product now in development. Details are subject to change without notice.

1

FEATURES

■

Dual Power Supplies of +5V, 10% and -3v, 6%

■

Low Power consumption; 980 mW @ 800Mb/s

(Single Head 100% Write mode duty cycle,

Random pattern, Iw = 40mA, Max Ovs).

■

Flip Chip package.L6316

■

Differential Voltage Bias / Voltage Sense

architecture. Current Bias available

■

Programmable read input differential

impedance.

■

Selectable read path bandwidth from 200 to

>600 MHz (Rmr=40

Ω). (Parameter dependent

on interconnect)

■

Selectable LF corner (1, 2.5, 3.5 or 5.5 MHz with

RMR=40

Ω).

■

Noise Figure of merit; 2.2 dB (Rmr=40

Ω)

■

MR bias voltage programmable from 70 to 225

mV nom. (5 bits) (7.2mA max).

■

MR bias current programmable from 0.65 to

7.2 mA nom. (5 bits) (225mV max).

■

Read input stage optimized for MR resistance

from 20 to 70 Ohm.

■

Programmable read voltage gain of 37, 40, 43,

46 dB Rmr = 40

Ω, Rload = 100Ω

■

Fully Differential write driver: Programmable

overshoot amplitude (3bits) and duration (2bits).

■

Write current rise/fall time with custom head and

interconnect model 140 pS at 40 mA (10% to

90%) (Steady state to steady state)

■

Write current amplitude programmable (5 bits) 0

to 62 mA (0-pk).

■

Bi-directional 16-bit serial interface 2.5V and

3.3V CMOS compatible.

■

2-pin (RXW and TFI), 2 bits mode selection

(WAKE, ENTFI).

■

All control signals are 2.5 & 3.3V CMOS

compatible.

■

Analog buffered head voltage ABHV (gain of 5)

■

Automatic digital MR resistance measurement

(7 bits).

■

Read head open detection, Read head shorted

detection.

■

Write head open or shorted to ground, Writer to

Reader short, write data frequency too low

detection.

■

SAFEDETECT method for write fault detection.

■

Low VCC or VEE supply & die over temperature

detect, Analog Temperature Measurement.

■

Fast write-to-read recovery 150nS (max) (same

head).

■

Head-to-head switch in read mode 1.5us (nom).

■

Zero MR bias, very low power (43mW) idle mode

with fast recovery to read mode 1.5us (nom).

■

MR bias switching without overshoot for head

protection.

■

Read-to-Write switching 50nS (max) (same

head).

■

ESD diodes for MR head protection

2

DESCRIPTION

The L6316 is a BICMOS Silicon Germanium inte-

grated circuit differential preamplifier. It is de-

signed for use with four-terminal MR read and in-

ductive write heads. In read mode, the device

consists of a fully differential amplifier, offering;

voltage or current bias, voltage-sense input, pro-

grammable input impedance, low noise and high

bandwidth. In write mode, it includes fast current

switching differential write drivers, which support

data rates up to 1200 Mb/s.

This preamplifier provides programmable read

voltage or current bias and write current (5 bit

DACs for the read bias and for the write current),

fault detection circuitry and servo track writing fea-

tures. Read amplifier gain, low corner frequency,

and write current wave shape are adjustable. The

amplitude and duration of the overshoot are sepa-

rately programmable through a 16-bit bi-direction-

al serial interface (SEN, SDATA, and SCLK). The

device operates from +5V and -3V supplies.

DATA BRIEF

4-CHANNEL LOW POWER PREAMPLIFIER

Rev. 1

Figure 1. Package

Table 1. Order Codes

Part Number

Package

L6316

Flip Chip

Flip Chip