Nov. 2022. Version 1.4

Magnachip Semiconductor Ltd.

2

Ordering Information

Part Number

Marking

Temp. Range

Package

Packing

RoHS Status

MBQ75T65PEHTH

75T65PEH

-55~175°C

TO-247

Tube

Halogen Free

Electrical Characteristics (Tvj = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Static Characteristics

Collector-emitter breakdown voltage

BVCES

IC = 2mA, VGE = 0V

650

-

-

V

Collector-emitter saturation voltage

VCE(sat)

IC = 75A, VGE= 15V

Tvj = 25°C

-

1.7

2

V

Tvj = 175°C

-

2.2

-

Diode forward voltage

VF

VGE = 0V, IF = 50A

Tvj = 25°C

-

1.55

1.8

V

Tvj = 175°C

-

1.6

-

Gate-emitter threshold voltage

VGE(th)

VCE = VGE, IC = 1.2mA

4.5

5.5

6.5

V

Zero gate voltage collector current

ICES

VCE = 650V, VGE = 0V, Tvj = 25°C

-

-

20

μA

Gate-emitter leakage current

IGES

VGE = 20V, VCE = 0V

-

-

±100

nA

Dynamic Characteristics

Total gate charge

QG

VCE = 520V, IC = 75A,

VGE = 15V

-

280

-

nC

Gate-emitter charge

QGE

-

42

-

Gate-collector charge

QGC

-

114

-

Input capacitance

Cies

VCE = 25V, VGE = 0V,

f = 1MHz

-

6900

-

pF

Output capacitance

Coes

-

230

-

Reverse transfer capacitance

Cres

-

158

-

Switching Characteristics

Turn-on delay time

td(on)

VGE = -5/15V, VCC = 400V,

IC = 75A, RG = 10

Ω,

Inductive Load, Tvj = 25°C

-

38

-

ns

Rise time

tr

-

192

-

Turn-off delay time

td(off)

-

156

-

Fall time

tf

-

103

-

Turn-on switching energy

Eon

-

4.69

-

mJ

Turn-off switching energy

Eoff

-

1.75

-

Total switching energy

Ets

-

6.44

-

Turn-on delay time

td(on)

VGE = -5/15V, VCC = 400V,

IC = 75A, RG = 10

Ω,

Inductive Load, Tvj = 175°C

-

37

-

ns

Rise time

tr

-

194

-

Turn-off delay time

td(off)

-

168

-

Fall time

tf

-

106

-

Turn-on switching energy

Eon

-

5.62

-

mJ

Turn-off switching energy

Eoff

-

2.04

-

Total switching energy

Ets

-

7.66

-

Reverse recovery time

trr

IF = 50A, diF/dt = 200A/

μs,

Tvj = 25°C

-

181

-

ns

Reverse recovery current

Irr

-

10.4

-

A

Reverse recovery charge

Qrr

-

1.12

-

μC

Reverse recovery time

trr

IF = 50A, diF/dt = 200A/

μs,

Tvj = 175°C

-

384

-

ns

Reverse recovery current

Irr

-

13.3

-

A

Reverse recovery charge

Qrr

-

3.07

-

μC