Jun. 2021. Version 1.2

Magnachip Semiconductor Ltd.

1

Absolute Maximum Ratings (TJ = 25 oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (1)

TC=25

oC (Silicon Limited)

ID

280

A

TC=25

oC (Package Limited)

180

TC=100

oC (Silicon Limited)

198

Pulsed Drain Current (2)

IDM

720

Power Dissipation

TC=25

oC

PD

416

W

TC=100

oC

208

Single Pulse Avalanche Energy (3)

EAS

544

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~175

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

RθJA

40

oC/W

Thermal Resistance, Junction-to-Case

RθJC

0.36

MDES10N025RH

Single N-channel Trench MOSFET 100V, 180A, 2.5mΩ

TO-263-7L

Features



VDS = 100V



ID = 180A @VGS = 10V



Very low on-resistance RDS(ON)

< 2.5 mΩ @VGS = 10V



100% Avalanche Tested



100% Rg Tested



100% △VDS Tested

D

G

S

General Description

The MDES10N025RH uses advanced Magnachip’s MOSFET

Technology, which provides high performance in on-state resistance,

fast switching performance, and excellent quality.

These devices can also be utilized in industrial applications

such as Low Power Drives of E-Vehicles(E-bike), DC/DC converter,

and general purpose applications.

1

7

Tab

Pin 1

Pin 2, 3, 5, 6, 7

Pin 4, Tab