MMQ60R078RF Datasheet

/

Magnachip Semiconductor Ltd.

Aug./2024/Revision/1.2

2

Parameter

Symbol

Rating

Unit

Note

Drain – Source voltage

VDSS

600

V

Gate – Source voltage

VGSS

±

30

V

Continuous drain current(1)

ID

50

A

TC=25℃

31.6

A

TC=100℃

Pulsed drain current(2)

IDM

150

A

Power dissipation

PD

266

W

Single - pulse avalanche energy(3)

EAS

1130

mJ

MOSFET dv/dt ruggedness

dv/dt

50

V/ns

Diode dv/dt ruggedness(4)

dv/dt

50

V/ns

Storage temperature

Tstg

-55 ~150

oC

Maximum operating junction

temperature

Tj

150

oC

1)

ID limited by maximum junction temperature

2)

Pulse width tP limited by Tj,max

3)

IAS = 9A

4)

ISD ≤ ID, di/dt = 1000A/μs, VDS peak ≤ V(BR)DSS, VDD= 400V, Tj=25oC

Parameter

Symbol

Value

Unit

Thermal resistance, junction-case max

RthJC

0.47

oC/W

Thermal resistance, junction-ambient max

RthJA

45.1

oC/W



Thermal Characteristics



Absolute Maximum Rating (Tc=25oC unless otherwise specified)