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2N65L-TN3-R Datasheet(PDF) 5 Page - Unisonic Technologies

Part # 2N65L-TN3-R
Description  2A, 650V N-CHANNEL POWER MOSFET
PDF  7 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N65L-TN3-R Datasheet(HTML) 5 Page - Unisonic Technologies

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2N65-TC
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
www.unisonic.com.tw
QW-R205-435.B
TYPICAL CHARACTERISTICS
Drain-Source Voltage, VDS (V)
Drain-Source On-Resistance vs.
Gate-Source Voltage
Gate-Source Voltage, VGS (V)
Gate Charge Characteristics
Total Gate Charge, QG (nC)
Drain-Source On-Resistance vs.
Junction Temperature
Junction Temperature, TJ (°C)
2A
Breakdown Voltage vs. Junction
Temperature
Junction Temperature, TJ (°C)
Drain Current vs. Drain-Source Voltage
VGS=6~10V
Note:
1.TA=25°C
2.Pulse test
VDS=520V
VGS=10V
ID=2A
Pulsed
VGS=10V
ID=1A
Pulsed
ID=0.25mA
Pulsed
Drain-Source Voltage, VDS (V)
Capacitance Characteristics
CISS
COSS
CRSS
Note:
1.TA=25°C
2.Pulse test
ID=1A
5V
0
4
8
12
16
20
0
1
2
3
4
0
2
4
6
12
10
8
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
25
50
75
100
125
150
20
40
0
10
30
50
0
5
10
15
20
2
4
6
10
8
3
5
9
7
0
2
4
6
8
10
1000
10
100
1
0
2
4
10
8
6



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