Rev.0 Feb. 24, 2006 page 1 of 4

HL6740FG

Dual Beam Visible Laser Diode

ODE-208-024 (Z)

Rev.0

Feb. 24, 2006

Description

The HL6740FG is a 0.67

µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is an array of

two individual beams on one chip. Therefore, it is suitable as a light source for a high-speed printer, such as PPC and

LBP, and so on.

Features

• Continuous operating output to each beam: 5 mW CW

• Visible light output: 675 nm Typ

• Difference of wavelength between 2 beams

: 3 nm Max

• Low threshold current: 35 mA Typ

Internal Circuit

Package Type

• HL6740FG: FG

1

3

2

4

PD

Absolute Maximum Ratings

Item

Symbol

Ratings

Unit

Optical output power

5

mW

Pulse optical output power

6*

mW

LD reverse voltage

2

V

PD reverse voltage

30

V

Operating temperature

Topr

–10 to +50

°C

Storage temperature

Tstg

–40 to +85

°C

Note:

Pulse condition : Pulse width

≤ 1 µs, duty ≤ 50%

Optical and Electrical Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Threshold current

Ith

—

35

50

mA

—

LD Operating current

—

—

75

mA

LD Operating voltage

—

2.3

2.7

V

Slope efficiency

ηs

0.2

0.4

0.6

mW/mA

Beam divergence

parallel to the junction

θ//

6.5

8

11

°

Beam divergence

perpendicular to the junction

θ⊥

20

30

36

°

Lasing wavelength

λp

665

675

680

nm

Difference of wavelength *

2

∆λp

—

—

3.0

nm

Monitor current

Is

1.0

—

4.0

mA

Notes: 1. The characteristics are specified under the condition of a single beam operation unless otherwise specified.

2.

∆λp is specified as absolute value of the difference between two beams operated every beam.