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G

G S

S B

B 11338866 PPNNPP EEPPIITTAAXXIIAALL SSIILLIICCOONN TTRRAANNSSIISSTTOORR

Description

The GSB1386 is a epitaxial planar type PNP silicon transistor .

Features

*Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A).

*Excellent DC current gain characteristics.

*Complements the GSD2098/GSD2118/GSD2097.

Package Dimensions

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Absolute Maximum Ratings (Ta = 25 : ,unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

VCBO

-30

V

Collector to Emitter Voltage

VCEO

-20

V

Emitter to Base Voltage

VEBO

-6

V

Collector Current(DC)

-5

A

Collector Current(PULSE)

(note1)

IC

-10

A

Collector Power Dissipation

0.5

W

Collector Power Dissipation (note2)

PD

2

W

* 1. Single pulse, PW=100ms.

* 2 .When mounted on a 40*40*0.7 mm ceramic board.

Electrical Characteristics (Ta = 25 : ,unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-30

-

-

V

IC=-50uA

BVCEO

-20

-

-

V

IC=-1mA

BVEBO

-6

-

-

V

IE=-50uA

ICBO

-

-

-0.5

uA

VCB=-20V

IEBO

-

-

-0.5

uA

VEB=-5V

VCE(sat)

-

-

-1

V

IC=-4A, IB=-0.1A

hFE

82

-

390

VCE=-2V, IC=-0.5A

fT

-

120

-

MHz

VCE=-6V, IE=-50mA, f=30MHz

Cob

-

60

-

pF

VCB=-20V, IE=0A, f=1MHz

Note: Measured using pulse current.

Classification Of hFE

Rank

P

Q

R

RANGE

82 - 180

120 - 270

180 - 390