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HL6331G Datasheet(PDF) 1 Page - Opnext. Inc.

Part # HL6331G
Description  Low Operating Current Visible Laser Diode
PDF  4 Pages
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Manufacturer  OPNEXT [Opnext. Inc.]
Direct Link  http://www.opnext.com
Logo OPNEXT - Opnext. Inc.

HL6331G Datasheet(HTML) 1 Page - Opnext. Inc.

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Rev.1 Oct. 21, 2005 page 1 of 4
HL6331G/32G
Low Operating Current Visible Laser Diode
ODE-208-032A (Z)
Rev.1
Oct. 21, 2005
Description
The HL6331G/32G are 0.63
µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They
are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
• Visible light output: λp = 635 nm Typ
• Single longitudinal mode
• Optical output power: 10 mW CW
• Low operating current : 55 mA Typ
• Low Operating voltage: 2.4 V Max
• Operating temperature : +60°C
• TM mode oscillation
LD
PD
1
3
2
Internal Circuit
• HL6331G
Internal Circuit
• HL6332G
Package Type
• HL6331G/32G: G2
LD
3
2
PD
1
Absolute Maximum Ratings
(TC = 25°C)
Item
Symbol
Ratings
Unit
Optical output power
PO
10
mW
LD reverse voltage
VR(LD)
2
V
PD reverse voltage
VR(PD)
30
V
Operating temperature
Topr
–10 to +60
°C
Storage temperature
Tstg
–40 to +85
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Threshold current
Ith
—
40
60
mA
—
Operating current
IOP
—
55
75
mA
PO = 10 mW
Operating voltage
VOP
—
2.2
2.4
V
PO = 10 mW
Slope efficiency
ηs
0.40
0.65
0.90
mW/mA
6 (mW) / (I(8mW) – I(2mW))
Beam divergence
parallel to the junction
θ//
6
8
11
°
PO = 10 mW
Beam divergence
perpendicular to the junction
θ⊥
25
31
36
°
PO = 10 mW
Lasing wavelength
λp
630
635
640
nm
PO = 10 mW
Monitor current
IS
0.08
0.15
0.30
mA
PO = 10 mW, VR(PD) = 5 V


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