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75F120WT Datasheet(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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75F120WT Datasheet(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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2 / 6 page ![]() R 75F120WT 版本:202201D 2/6 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) 项 目 Parameter 符 号 Symbol 数 值 Value 单 位 Unit 反向重复峰值电压 Peak Repetitive Reverse Voltage VRRM 1200 V 平均正向整流电流 TC B =125℃ Average Forward Rectified Curren IF(AV) 75 A 非重复浪涌正向电流 Non-Repetitive Surge Forward Current t=8.3ms IFSM 450 A 雪崩能量 Avalanche Energy(per diode) (L=40mH) EAVL 20 mJ 结温 Junction Temperature Tj -55~+175 ℃ 存储温度 Storage temperature range TSTG -55~+175 ℃ 电特性 ELECTRICAL CHARACTERISTICS (Tc=25℃ unless otherwise specified) 热特性 THERMAL CHARACTERISTICS(maximum) 项 目 Parameter 符 号 Symbol 最大值 Value(max) 单 位 Unit 结到管壳的热阻 Thermal Resistance Junction to Case Rth(j-c) 0.4 ℃/W 项 目 Parameter 测试条件 Tests conditions 最小值 Value(min) 典型值 Value(typ) 最大值 Value(max) 单位 Unit VR IR =50μA 1200 - - V IR Tj =25 ℃ VR=VRRM - - 100 μA Tj =125 ℃ - - 800 μA VF Tj =25 ℃ IF=75A - 2.7 3.3 V Tj =125 ℃ - - 2.9 V trr IF=0.5A, IR=1A, IRR=0.25A - 65 85 ns trr IF=1A, VR=30V, diF/dt=-1 00A/μs - 40 50 ns trr IF=60A, VR=200V, diF/dt=-2 00A/μs Tc =25 ℃ - 45 - ns Qrr - 120 - nc IRRM - 4.6 - A trr IF=60A, VR=200V, diF/dt=-2 00A/μs Tc =125 ℃ - 155 - ns Qrr - 764 - nc IRRM - 10 - A |
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