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TDA8586 Datasheet(PDF) 13 Page - NXP Semiconductors

Part # TDA8586
Description  Power amplifier with load detection and auto BTL/SE selection
PDF  24 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA8586 Datasheet(HTML) 13 Page - NXP Semiconductors

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1999 Apr 08
13
Philips Semiconductors
Preliminary specification
Power amplifier with load detection and
auto BTL/SE selection
TDA8586
Notes
1. Tolerances on the mute level is tight because of the usage of this pin for integration during load detection.
2. The output power is measured directly on the pins of the IC.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
Quad SE application (see Fig.8)
THD
total harmonic distortion
fi = 1 kHz; Po =1W; RL =4 Ω−
0.05
0.15
%
45 Hz < fi < 10 kHz; Po =1W;
RL =4 Ω; filter: f < 30 kHz
−
0.5
−
%
Po
output power
VP = 14.4 V; RL =4 Ω; note 2
THD = 0.5%
4
4.5
−
W
THD = 10%
5
6
−
W
Gv
voltage gain
Vi(rms) =15mV
25
26
27
dB
∆G
v
channel unbalance
Vi(rms) =15mV
−0.7
0
+0.7
dB
α
cs
channel separation
Po =2W; fi = 1 kHz; RL =4 Ω
40
50
−
dB
VOO
DC output offset voltage
VP = 14.4 V; on condition
−
0
100
mV
VP = 14.4 V; RL =4 Ω;
mute condition
−
10
20
mV
Vn(o)
noise output voltage on
Rs =1kΩ; VP = 14.4 V; note 3
−
80
150
µV
Vn(o)(mute)
noise output voltage mute
note 3
−
020
µV
Vo(mute)
output voltage mute
Vi(rms) =1V
−
3
500
µV
SVRR
supply voltage ripple rejection
Rs =0 Ω; fi = 1 kHz;
Vripple = 2 V (p-p)
on condition
43
47
−
dB
mute condition
55
70
−
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT



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