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ISSUED DATE :2005/01/26

REVISED DATE :2005/03/22B

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.1

-

V/ :

Gate Threshold Voltage

-0.5

-

-1.2

V

Forward Transconductance

-

1.5

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-10

uA

-

135

300

Static Drain-Source On-Resistance

-

192

500

m Ł

-

5.2

10

Gate-Source Charge

-

1.36

-

Gate-Drain (“Miller”) Change

-

0.6

-

nC

-

5

-

Rise Time

-

20

-

Turn-off Delay Time

-

55

-

Fall Time

-

70

-

ns

Input Capacitance

-

180

-

Output Capacitance

-

120

-

Reverse Transfer Capacitance

-

60

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.1

V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.