2/4

ISSUED DATE :2006/07/26

REVISED DATE :2006/11/09B

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.1

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

0.5

-

1.0

V

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

25

uA

-

-

28

-

-

38

m

-

10

-

Gate-Source Charge

-

3.6

-

Gate-Drain (“Miller”) Change

-

2

-

nC

-

8

-

Rise Time

-

6

-

Turn-off Delay Time

-

19

-

Fall Time

-

7

-

ns

Input Capacitance

-

550

-

Output Capacitance

-

120

-

Reverse Transfer Capacitance

-

80

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

0.7

1.3

V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on FR4 board, t

10sec.