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ISSUED DATE :2004/07/06

REVISED DATE :2005/03/14B

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.1

-

V/ :

Gate Threshold Voltage

0.5

-

1.2

V

Forward Transconductance

-

6

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

10

uA

-

-

85

-

-

115

m Ł

-

4.4

-

Gate-Source Charge

-

0.6

-

Gate-Drain (“Miller”) Change

-

1.9

-

nC

-

5.2

-

Rise Time

-

37

-

Turn-off Delay Time

-

15

-

Fall Time

-

5.7

-

ns

Input Capacitance

-

145

-

Output Capacitance

-

100

-

Reverse Transfer Capacitance

-

50

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

-

1

A

1

-

-

10

A

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.