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ISSUED DATE :2005/05/16

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.01

-

V/ :

Gate Threshold Voltage

-

-

-1.2

V

Forward Transconductance

-

4.0

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-25

uA

-

-

120

-

-

160

-

-

300

m Ł

-

5

8

Gate-Source Charge

-

1

-

Gate-Drain (“Miller”) Change

-

2

-

nC

-

6

-

Rise Time

-

17

-

Turn-off Delay Time

-

16

-

Fall Time

-

5

-

ns

Input Capacitance

-

270

430

Output Capacitance

-

70

-

Reverse Transfer Capacitance

-

55

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

-

20

-

ns

Reverse Recovery Charge

-

15

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

10sec; 270 /W

:

when mounted on Min.

copper pad.