CORPORATION

2/4

ISSUED DATE :2005/03/04

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.1

-

V/ :

Gate Threshold Voltage

-1.0

-

-

V

Forward Transconductance

-

2

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-10

uA

-

-

240

-

-

270

-

-

460

-

-

500

m Ł

-

6.2

-

Gate-Source Charge

-

1.4

-

Gate-Drain (“Miller”) Change

-

0.3

-

nC

-

7.6

-

Rise Time

-

8.2

-

Turn-off Delay Time

-

17.5

-

Fall Time

-

9

-

ns

Input Capacitance

-

230

-

Output Capacitance

-

130.4

-

Reverse Transfer Capacitance

-

40

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

-

-1

A

1

-

-

-6.4

A

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.