G3407 datasheet(2/4 Pages) GTM

2 / 4 page

CORPORATION

G3407

Page: 2/4

ISSUED DATE :2007/01/15

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID=-250uA

Gate Threshold Voltage

VGS(th)

-1.0

-3.0

VDS=VGS, ID=-250uA

Forward Transconductance

gfs

8.2

VDS=-5V, ID=-4A

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V

Drain-Source Leakage Current(Tj=25 : )

-1

VDS=-30V, VGS=0

Drain-Source Leakage Current(Tj=55 : )

IDSS

-5

VDS=-24V, VGS=0

VGS=-10V, ID=-4.1A

Static Drain-Source On-Resistance

RDS(ON)

VGS=-4.5V, ID=-3.0A

Total Gate Charge2

Gate-Source Charge

Qgs

3.1

Gate-Drain (“Miller”) Change

Qgd

ID=-4A

VDS=-15V

VGS=-4.5V

Turn-on Delay Time2

Td(on)

8.6

Rise Time

Turn-off Delay Time

Td(off)

28.2

Fall Time

13.5

VDS=-15V

VGS=-10V

RG=3

RL=3.6

Input Capacitance

Ciss

700

840

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

VGS=0V

VDS=-15V

f=1.0MHz

Gate Resistance

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-1.0

IS=-1.0A, VGS=0V

Reverse Recovery Time2

Trr

Reverse Recovery Charge

Qrr

IS=-4A, VGS=0V

dI/dt=100A/ s

Continuous Source Current (Body Diode)

-2.2

VD=VG=0V, VS=-1.0V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad.

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