CORPORATION

2/4

ISSUED DATE :2005/01/17

REVISED DATE :2005/03/22B

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Breakdown Voltage Temperature Coefficient

-

-0.1

-

V/ :

Gate Threshold Voltage

-0.5

-

-

V

Forward Transconductance

gfs

-

9

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-10

uA

-

-

65

-

-

135

m Ł

-

10.6

-

Gate-Source Charge

-

2.32

-

Gate-Drain (“Miller”) Change

-

3.68

-

nC

-

5.9

-

Rise Time

-

3.6

-

Turn-off Delay Time

-

32.4

-

Fall Time

-

2.6

-

ns

Input Capacitance

-

740

-

Output Capacitance

-

167

-

Reverse Transfer Capacitance

-

126

-

pF

f=1.0MHz

Source-Drain Diode

-

-

-1.2

V

Reverse Recovery Time

-

27.7

-

ns

Reverse Recovery Charge

-

22

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

Characteristics Curve