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ISSUED DATE :2005/01/10

REVISED DATE :

G

D

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O L T A G E 4 0 V, C U R R E N T 3 5 0 m A

Description

The GD103SD is designed for low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time

and low reverse capacitance.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.05

A1

0

0.10

L

0.20

0.40

A2

0.80

1.00

b

0.25

0.40

D

1.15

1.45

c

0.10

0.18

E

1.60

1.80

HE

2.30

2.70

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Storage Temperature

Tstg

-65 ~ +125

:

Peak Repetitive Reverse Voltage

40

V

RMS Reverse Voltage

28

V

Forward Continuous Current

350

mA

Repetitive Peak Forward Current(t 1.0s)

1.5

A

Thermal Resistance Junction to Ambient

625

: /W

Total Power Dissipation at Ta = 25 :

PD

225

mW

Characteristics at Ta = 25 ::::

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

40

-

-

V

IR=10 A

-

-

370

mV

IF=20mA

Forward Voltage

-

-

600

mV

IF=200mA

Reverse Leakage Current

-

-

5.0

A

VR=30V

Total Capacitance

-

5.0

-

pF

VR=0V, f=1MHz

Reverse Recover Time

Trr

-

10

-

ns

IF=IR=200mA, IR(Rec)=20mA, RL=100 Ł