1/2

ISSUED DATE :2004/09/20

REVISED DATE :

G

D

S

E

V O L T A G E 4 5 V, C U R R E N T 0 . 1 A

Description

The GD501SD is designed for low power rectification and high reliability.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.05

A1

0

0.10

L

0.20

0.40

A2

0.80

1.00

b

0.25

0.40

D

1.15

1.45

c

0.10

0.18

E

1.60

1.80

HE

2.30

2.70

Q1

0.15 BSC.

:

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+125

Storage Temperature

Tstg

-40 ~ +125

Maximum Peak Repetitive Reverse Voltage

45

V

Maximum RMS Voltage

32

V

Maximum DC Blocking Voltage

40

V

Peak Forward Surge Current at 8.3mSec single half sine-wave

1.0

A

Typical Junction Capacitance between Terminal (Note 1)

6.0

pF

Maximum Average Forward Rectified Current

Io

0.1

A

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 25 ::::

Characteristics

Symbol

Max

Unit

Test Condition

Maximum Instantaneous Forward Voltage

0.55

V

IF = 100mA

Maximum Instantaneous Forward Voltage

0.34

V

IF = 10 mA

Maximum Average Reverse Current

IR

30.0

uA

VR = 10V

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10.0 volt.

2. ESD sensitive product handling required.