GE75NF75

Page: 2/4

ISSUED DATE :2006/09/05

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

75

-

-

V

Gate Threshold Voltage

2.0

-

4.0

V

Forward Transconductance

-

34

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

Drain-Source Leakage Current(Tj=55 : )

-

-

5

uA

-

-

11

m

-

114

-

Gate-Source Charge

-

33

-

Gate-Drain (“Miller”) Change

-

18

-

nC

-

21

-

Rise Time

-

39

-

Turn-off Delay Time

-

70

-

Fall Time

-

24

-

ns

Input Capacitance

-

7000

-

Output Capacitance

-

400

-

Reverse Transfer Capacitance

-

87

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.5

V

-

53

-

ns

Reverse Recovery Charge

-

143

-

nC

dI/dt=100A/ s

-

-

80

A

Notes: 1. Pulse width limited by safe operating area.

3. Pulse width 300us, duty cycle 2%.