GE85L02

Page: 2/5

ISSUED DATE :2005/12/06

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

25

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.037

-

V/ :

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

45

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

-

-

25

uA

-

-

6

Static Drain-Source On-Resistance

-

-

10

m

-

49

-

Gate-Source Charge

-

5

-

Gate-Drain (“Miller”) Change

-

36.5

-

nC

-

12

-

Rise Time

-

85

-

Turn-off Delay Time

-

35

-

Fall Time

-

110

-

ns

Input Capacitance

-

1510

-

Output Capacitance

-

950

-

Reverse Transfer Capacitance

-

450

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.26

V

-

-

85

A

1

-

-

310

A

Notes: 1. Pulse width limited by safe operating area.

2. Pulse width 300us, duty cycle 2%.