GI41C datasheet(1/2 Pages) GTM

Part #	GI41C

Description	NPN EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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G

I41C

Page: 1/2

ISSUED DATE :2005/05/12

REVISED DATE :

G

G II4411C

C

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The G

I41C is designed for use in general purpose amplifier and switching applications.

Features

*Complementary to G

I42C

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF.

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80

Absolute Maximum Ratings (Ta = 25 : ,unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

100

V

Collector to Emitter Voltage

VCEO

100

V

Emitter to Base Voltage

VEBO

5

V

Collector Current (DC)

IC

6

A

Collector Current (Pulse)

IC

10

A

Junction Temperature

Tj

+150

:

Storage Temperature

TsTG

-55 ~ +150

:

PD

2

W

Total Power Dissipation

PD(TC=25 )

:

20

W

Electrical Characteristics (Rating at Ta=25 :::: )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

100

-

V

IC=1mA, IE=0

BVCEO

100

-

V

IC=30mA, IB=0

BVEBO

5

-

V

IE=1mA, IC=0

ICES

-

10

uA

VCE=100V, VEB=0V

ICEO

-

50

uA

VCE=60V, IB=0

IEBO

-

500

uA

VEB=5V, IC=0

*VCE(sat)

-

1.5

V

IC =6A, IB=600mA

*VBE(on)

-

2.0

V

VCE=4V, IC=6A

*hFE1

30

-

VCE=4V, IC=300mA

*hFE2

15

-

75

VCE=4V, IC=3A

fT

3

-

MHz

VCE=10V, IC=500mA, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

TO-251

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