G

Page: 2/4

ISSUED DATE :2006/12/07

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Gate Threshold Voltage

1.0

-

2.5

V

Forward Transconductance

-

40

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

Drain-Source Leakage Current(Tj=55 )

:

-

-

25

uA

-

-

11

-

-

13.5

m

-

22

28

Gate-Source Charge

-

3.7

-

Gate-Drain (“Miller”) Change

-

2.7

-

nC

-

10

-

Rise Time

-

6.3

-

Turn-off Delay Time

-

21

-

Fall Time

-

2.8

-

ns

Input Capacitance

-

1210

1452

Output Capacitance

-

330

-

Reverse Transfer Capacitance

-

85

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.0

V

-

-

55

A

-

36

-

ns

Reverse Recovery Charge

-

47

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by safe operating area.

2. Pulse width 300us, duty cycle 2%.