GI965 datasheet(1/2 Pages) GTM

Part #	GI965

Description	NPN EPITAXIAL PLANAR TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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G

I965

Page: 1/2

ISSUED DATE :2005/05/12

REVISED DATE :

G

G II996655

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The G

I965 is designed for use as AF output amplifier and flash unit.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF.

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80

Absolute Maximum Ratings (Ta = 25 : ,unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

40

V

Collector to Emitter Voltage

VCEO

20

V

Emitter to Base Voltage

VEBO

7

V

Collector Current (Continuous)

IC

5

A

Collector Current (Peak PT=10mS)

ICP

8

A

Junction Temperature

Tj

+150

:

Storage Temperature

TsTG

-55 ~ +150

:

Total Power Dissipation

PD

2

W

Electrical Characteristics (Rating at Ta=25 :::: )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

V

IC=100uA

BVCEO

20

-

V

IC=1mA

BVEBO

7

-

V

IE=10uA

ICBO

-

100

nA

VCB=60V

IEBO

-

100

nA

VEB=7V

*VCE(sat)

-

350

1000

mV

lC=3A, IB=100mA

*hFE1

230

-

800

VCE=2V, IC=500mA

*hFE2

150

-

VCE=2V, IC=2A

fT

-

150

-

MHz

VCE=6V, IE=50mA

Cob

-

50

pF

VCB=20V, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Classification Of hFE1

Rank

Q

R

S

Range

230 ~ 380

340 ~ 600

560 ~ 800

TO-251

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