G

Page: 2/5

ISSUED DATE :2006/05/12

REVISED DATE :2007/01/25C

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.037

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

4

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

:

-

-

25

uA

-

-

26

Static Drain-Source On-Resistance

-

-

40

m

-

4.6

-

Gate-Source Charge

-

1.1

-

Gate-Drain (“Miller”) Change

-

3

-

nC

-

4.9

-

Rise Time

-

22.5

-

Turn-off Delay Time

-

12.2

-

Fall Time

-

3.3

-

ns

Input Capacitance

-

160

-

Output Capacitance

-

107

-

Reverse Transfer Capacitance

-

32

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.3

V

-

-

15

A

1

-

-

50

A

Notes: 1. Pulse width limited by safe operating area.

2. Pulse width 300us, duty cycle 2%.