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Page: 2/4

ISSUED DATE :2005/08/24

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

25

-

-

V

Gate Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

-

-

25

uA

-

-

50

m Ł

-

7.4

13

Gate-Source Charge

-

2.2

-

Gate-Drain (“Miller”) Change

-

4.2

-

nC

-

8

-

Rise Time

-

7.4

-

Turn-off Delay Time

-

11

-

Fall Time

-

3

-

ns

Input Capacitance

-

164

290

Output Capacitance

-

158

-

Reverse Transfer Capacitance

-

62

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.3

V

Reverse Recovery Time

-

29

-

ns

Reverse Recovery Charge

-

21

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by safe operating area.

2. Pulse width 300us, duty cycle 2%.