G

Page: 2/4

ISSUED DATE :2005/08/16

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

25

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.02

-

V/ :

Gate Threshold Voltage

2.0

-

4.0

V

Forward Transconductance

-

20

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

-

-

100

uA

-

-

25

m Ł

-

14.5

24

Gate-Source Charge

-

3

-

Gate-Drain (“Miller”) Change

-

8.5

-

nC

-

8.8

-

Rise Time

-

65

-

Turn-off Delay Time

-

11

-

Fall Time

-

7

-

ns

Input Capacitance

-

340

540

Output Capacitance

-

250

-

Reverse Transfer Capacitance

-

98

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.5

V

Reverse Recovery Time

-

30.5

-

ns

Reverse Recovery Charge

-

29

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by safe operating area.

2. Pulse width 300us, duty cycle 2%.