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ISSUED DATE :2005/02/25

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.1

-

V/ :

Gate Threshold Voltage

-1.0

-

-3.0

V

Forward Transconductance

-

2

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

-

-

-25

uA

-

-

200

-

-

400

m

-

3.8

-

Gate-Source Charge

-

1.7

-

Gate-Drain (“Miller”) Change

-

1.6

-

nC

-

6.7

-

Rise Time

-

20.8

-

Turn-off Delay Time

-

14.9

-

Fall Time

-

4.4

-

ns

Input Capacitance

-

217

-

Output Capacitance

-

103

-

Reverse Transfer Capacitance

-

31

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

Reverse Recovery Time

-

35

-

ns

Reverse Recovery Charge

-

63

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.