GI8050 datasheet(1/2 Pages) GTM

Part #	GI8050

Description	NPN EPITAXIAL TRANSISTOR

PDF	2 Pages

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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G

I8050

Page: 1/2

ISSUED DATE :2005/05/06

REVISED DATE :

G

G II88005500

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The G

I8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

Features

*High Collector current (IC: 1.5A)

*Complementary to G

I8550

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF.

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80

Absolute Maximum Ratings (Ta = 25 : ,unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

40

V

Collector to Emitter Voltage

VCEO

25

V

Emitter to Base Voltage

VEBO

6

V

Collector Current

IC

1.5

A

Base Current

IB

0.5

A

Junction Temperature

Tj

+150

:

Storage Temperature

TsTG

-55 ~ +150

:

Total Power Dissipation

PD

1.25

W

Electrical Characteristics (Rating at 25 :::: ambient temperature unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

V

IC=100uA

BVCEO

25

-

V

IC=2mA

BVEBO

6

-

V

IE=100uA

ICBO

-

100

nA

VCB=35V

IEBO

-

100

nA

VBE=6V

*VCE(sat)

-

0.5

V

lC=800mA, IB=80mA

*VBE(sat)

-

1.2

V

lC=800mA, IB=80mA

*VBE(on)

-

1.0

V

VCE=1V, IC=10mA

*hFE1

45

-

VCE=1V, IC=5mA

*hFE2

120

-

500

VCE=1V, IC=100mA

*hFE3

40

-

VCE=1V, IC=800mA

fT

100

-

MHz

VCE=10V, IC=50mA, f=100MHz

Cob

-

9

-

pF

VCB=10V, IE=0, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Classification Of hFE2

Rank

C

D

E

Range

120 ~ 200

160 ~ 300

250 ~ 500

TO-251

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