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Page: 2/4

ISSUED DATE :2005/02/23

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.1

-

V/ :

Gate Threshold Voltage

-1.0

-

-3.0

V

Forward Transconductance

-

9.6

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-25

uA

-

-

50

-

-

90

m

-

10

16

Gate-Source Charge

-

3

-

Gate-Drain (“Miller”) Change

-

5

-

nC

-

9.6

-

Rise Time

-

18

-

Turn-off Delay Time

-

19

-

Fall Time

-

14

-

ns

Input Capacitance

-

463

740

Output Capacitance

-

187

-

Reverse Transfer Capacitance

-

140

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

Reverse Recovery Time

-

34

-

ns

Reverse Recovery Charge

-

30

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.